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< Page ，Total 26 >
Neutral-Point Voltage Analysis and Suppression for NPC Three-Level Photovoltaic Converter in LVRT Operation under Imbalanced Grid Faults with Selective Hybrid SVPWM Strategy EI Scopus SCIE

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Abstract ：

Balanced issues of neutral-point (NP) voltage in the neutral-point-clamped (NPC) three-level photovoltaic converter have been deeply studied. Numerous algorithms for NP voltage control have been proposed and proven to be effective in normal operations. However, most of previous studies fail to consider effect of imbalanced loads on NP voltage, especially under low-voltage-ride-through (LVRT) condition, which faces problems of imbalanced grid voltages and low power factor. In this paper, through derivation of NP current model for different loading conditions, the behavior of NP voltage under LVRT condition is comprehensively analyzed for the first time. Then, theoretical limitations of NP voltage control based on two common space-vector-pulse-width modulations (SVPWM) that three-nearest-vectors and symmetric SVPWM are investigated, and additional low-frequency oscillation in NP voltage is analyzed. This oscillation is dominated by fundamental frequency and has different generation mechanisms under different imbalanced grid faults. Then, a novel method of selective hybrid SVPWM, as selective combinations of SVPWM and virtual SVPWM according to different imbalanced grid faults, is proposed to effectively suppress NP voltage oscillations in LVRT operation without any complex improvements and increase of DC-link capacitor values. Finally, the analytical result and performance of proposed method are confirmed in an existing 300kW NPC converter. IEEE

Keyword ：

Low voltage ride through (LVRT) Neutral point clamped Neutral-point voltage balances Photovoltaic converter Space vector pulse width modulation

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 GB/T 7714 Li, Yang , Yang, Xu , Chen, Wenjie et al. Neutral-Point Voltage Analysis and Suppression for NPC Three-Level Photovoltaic Converter in LVRT Operation under Imbalanced Grid Faults with Selective Hybrid SVPWM Strategy [J]. | IEEE Transactions on Power Electronics , 2019 , 34 (2) : 1334-1355 . MLA Li, Yang et al. "Neutral-Point Voltage Analysis and Suppression for NPC Three-Level Photovoltaic Converter in LVRT Operation under Imbalanced Grid Faults with Selective Hybrid SVPWM Strategy" . | IEEE Transactions on Power Electronics 34 . 2 (2019) : 1334-1355 . APA Li, Yang , Yang, Xu , Chen, Wenjie , Liu, Tao , Zhang, Feng . Neutral-Point Voltage Analysis and Suppression for NPC Three-Level Photovoltaic Converter in LVRT Operation under Imbalanced Grid Faults with Selective Hybrid SVPWM Strategy . | IEEE Transactions on Power Electronics , 2019 , 34 (2) , 1334-1355 . Export to NoteExpress RIS BibTex
Advanced Active Gate Drive for Switching Performance Improvement and Overvoltage Protection of High-Power IGBTs EI SCIE Scopus

WoS CC Cited Count： 1 SCOPUS Cited Count： 1
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Abstract ：

This paper presents a new active gate drive (AGD) for switching performance improvement and overvoltage protection of high-power insulated gate bipolar transistors (IGBTs). In addition to the conventional gate drive (CGD) based on fixed voltage sources and fixed gate drive resistors, the proposed AGD has a complementary current source to provide extra gate drive current into the gate. Specific transient switching stages of the IGBT can be therefore accelerated, leading to higher switching speed and lower switching loss of the IGBT. Additionally, the turn-off voltage overshoot of the IGBT can be controlled at a preset reference value with a fast closed-loop overvoltage protection circuit. Moreover, the switching speed of the IGBT, including the turn-on/off delay times and the turn-on/off voltage slopes, can be effectively regulated with an adaptive switching speed control method. Accordingly, the gate drive is capable of operating the IGBT at specified delay times and fixed voltage slopes when varying the switching conditions (e.g., temperature, load current). The operation principle of the proposed AGD and control concept are presented. By comparing with the CGD, the proposed method is experimentally verified on a 3.3 kV/1.5 kA IGBT module in both double-pulse and multipulse tests.

Keyword ：

insulated gate bipolar transistors (IGBTs) overvoltage protection Active gate drive (AGD) switching loss adaptive feedback control

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 GB/T 7714 Zhang, Fan , Yang, Xu , Ren, Yu et al. Advanced Active Gate Drive for Switching Performance Improvement and Overvoltage Protection of High-Power IGBTs [J]. | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2018 , 33 (5) : 3802-3815 . MLA Zhang, Fan et al. "Advanced Active Gate Drive for Switching Performance Improvement and Overvoltage Protection of High-Power IGBTs" . | IEEE TRANSACTIONS ON POWER ELECTRONICS 33 . 5 (2018) : 3802-3815 . APA Zhang, Fan , Yang, Xu , Ren, Yu , Feng, Lei , Chen, Wenjie , Pei, Yunqing . Advanced Active Gate Drive for Switching Performance Improvement and Overvoltage Protection of High-Power IGBTs . | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2018 , 33 (5) , 3802-3815 . Export to NoteExpress RIS BibTex
Research on a 4000-V-Ultrahigh Input-Switched-Mode Power Supply Using Series-Connected MOSFETs EI SCIE Scopus

WoS CC Cited Count： 1 SCOPUS Cited Count： 1
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Abstract ：

A 4000-V-ultrahigh-input voltage-switched-mode power supply (UHV-SMPS) using series-connected MOSFETs is designed in this paper. The main contributions of the proposed scheme include the common-mode interference modeling of the multiswitch structure, voltage balance of the switches and driving method. First, the common-mode interference of UHV-SMPS is evaluated by a high-frequency equivalent model of the proposed scheme. Then, a detailed multiswitch common-mode electromagnetic interference mathematical model is derived and the interference quantity is calculated according to the coupling of series-connected switches. Second, a new mathematical regulation for passive snubber circuit is proposed to realize input voltage balance. Through the regularity of the equivalent parasitic capacitances, the design of compensatory capacitance and voltage balance can realized with ease. Third, a novel driving method based on integrated pulse transformer is proposed. It can achieve both good consistency to the gate signals of MOSFETs and ultrahigh isolation voltage in the wide range input applications. Finally, the experimental results obtained from a 300-4000 V wide range input prototype verified the feasibility of the proposed scheme and accuracy of the theoretical analysis.

Keyword ：

ultrahigh input Common-mode (CM) interference voltage balance series connected

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 GB/T 7714 Chen, Xiliang , Chen, Wenjie , Yang, Xu et al. Research on a 4000-V-Ultrahigh Input-Switched-Mode Power Supply Using Series-Connected MOSFETs [J]. | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2018 , 33 (7) : 5995-6011 . MLA Chen, Xiliang et al. "Research on a 4000-V-Ultrahigh Input-Switched-Mode Power Supply Using Series-Connected MOSFETs" . | IEEE TRANSACTIONS ON POWER ELECTRONICS 33 . 7 (2018) : 5995-6011 . APA Chen, Xiliang , Chen, Wenjie , Yang, Xu , Han, Yaqiang , Hao, Xiang , Xiao, Tianluan . Research on a 4000-V-Ultrahigh Input-Switched-Mode Power Supply Using Series-Connected MOSFETs . | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2018 , 33 (7) , 5995-6011 . Export to NoteExpress RIS BibTex
A High-Bandwidth Integrated Current Measurement for Detecting Switching Current of Fast GaN Devices EI SCIE Scopus

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Abstract ：

Gallium nitride (GaN) devices are suitable for high-frequency power converters due to their excellent switching performance. To maximize the performance of GaN devices, it is necessary to study the switching characteristics, which requires measuring the switching current. However, GaN devices have a fast switching speed and are sensitive to parasitic parameters, so the current measurement should have a high bandwidth and should not introduce excessive parasitic inductance into the power converters. Traditional current measurements are difficult to meet these requirements, especially for fast GaN devices. This paper presents a high-bandwidth integrated current measurement for detecting the switching current of fast GaN devices. By effectively utilizing the parasitic inductance in the circuit, a single-turn coil is embedded in the printed circuit board. This coil could pick up a sufficiently strong voltage signal, which is then processed to reconstruct the switching current. Moreover, corrections are carried out to further improve the accuracy. The current measurement has a small insertion impedance and a high bandwidth with a small influence on the parasitic inductance of the converter. The accuracy of the current measurement is experimentally verified by a 40 V GaN-based double pulse test circuit with a load current up to 25 A.

Keyword ：

double pulse test circuit gallium nitride (GaN) Current measurement parasitic inductance high bandwidth

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 GB/T 7714 Wang, Kangping , Yang, Xu , Li, Hongchang et al. A High-Bandwidth Integrated Current Measurement for Detecting Switching Current of Fast GaN Devices [J]. | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2018 , 33 (7) : 6199-6210 . MLA Wang, Kangping et al. "A High-Bandwidth Integrated Current Measurement for Detecting Switching Current of Fast GaN Devices" . | IEEE TRANSACTIONS ON POWER ELECTRONICS 33 . 7 (2018) : 6199-6210 . APA Wang, Kangping , Yang, Xu , Li, Hongchang , Wang, Laili , Jain, Praveen . A High-Bandwidth Integrated Current Measurement for Detecting Switching Current of Fast GaN Devices . | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2018 , 33 (7) , 6199-6210 . Export to NoteExpress RIS BibTex
Instability Analysis and Oscillation Suppression of Enhancement-Mode GaN Devices in Half-Bridge Circuits EI SCIE Scopus

WoS CC Cited Count： 1 SCOPUS Cited Count： 2
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Abstract ：

This paper analyzes the problem of instability in enhancement-mode gallium nitride (GaN) transistors based half-bridge circuits. The instability may cause sustained oscillation, resulting in overvoltage, excessive electromagnetic interference (EMI), and even device breakdown. GaN devices operate in the saturation region when they conduct reversely during the dead time. Under the influence of parasitic parameters, the GaN-based half-bridge circuit exhibits positive feedback under certain conditions, thus, resulting in sustained oscillation. A small-signal model is proposed to study this positive feedback phenomenon. Like the second-order under-damped system, damping ratio is defined to determine the system's stability. Based on the model, the influence of circuit parameters on instability is investigated and guidelines to suppress the oscillation are given. Reducing the common-source inductance, increasing the gate resistance of the inactive switch or connecting a diode in parallel to the inactive switch are some effective ways to suppress the oscillation. Finally, the analyses are verified by both simulation and experiment.

Keyword ：

sustained oscillation Gallium nitride (GaN) parasitic reverse conduction positive feed-back

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 GB/T 7714 Wang, Kangping , Yang, Xu , Wang, Laili et al. Instability Analysis and Oscillation Suppression of Enhancement-Mode GaN Devices in Half-Bridge Circuits [J]. | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2018 , 33 (2) : 1585-1596 . MLA Wang, Kangping et al. "Instability Analysis and Oscillation Suppression of Enhancement-Mode GaN Devices in Half-Bridge Circuits" . | IEEE TRANSACTIONS ON POWER ELECTRONICS 33 . 2 (2018) : 1585-1596 . APA Wang, Kangping , Yang, Xu , Wang, Laili , Jain, Praveen . Instability Analysis and Oscillation Suppression of Enhancement-Mode GaN Devices in Half-Bridge Circuits . | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2018 , 33 (2) , 1585-1596 . Export to NoteExpress RIS BibTex
A fixed topology Thevenin equivalent integral model for modular multilevel converters EI SCIE Scopus

SCOPUS Cited Count： 1
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Abstract ：

The Thevenin equivalent model for half-bridge modular multilevel converters on electromagnetic transient simulation, applying 2-state resistances to represent switches and adopting Dommel's algorithm to get a discretized capacitance in each submodule, achieves good central processing unit time saving while maintaining the identity of every submodule. But the large number of changeable resistances still brings a computational challenge for simulation efficiency, because the admittance matrix gets an equaled size to the amount of nodes, and inverts (re-triangularizes) each time when a switch performs. This paper presents a novel fixed topology Thevenin equivalent half-bridge modular multilevel converter integral model and simplifies its mathematical expression markedly. The choice of integration methods is also performed by discussion of the stability, and backward Euler algorithm is selected for further speedup. Basically, it achieves speedup by (1) the use of novel Thevenin equivalent model to achieve unchangeable admittance matrix while regarding the switches as excitations; (2) merging the elements (inductances, resistances, and submodules) in the arm of modular multilevel converter by Thevenin equivalent to reduce the order of admittance matrix; (3) simplifying the mathematica expression of sub module by Thevenin equivalent and omitting the small resistance; and (4) the use of backward Euler algorithm to discretize all the elements (capacitances, inductances, resistances, and submodules) in the circuit for a better convergence speed and larger speedup factor. The model is implemented in a 3-phase grid-connected modular multilevel converter circuit; the results show that the proposed Thevenin equivalent integral model makes a good accuracy on simulating the performances of the half-bridge modular multilevel converter with drastically reduced computational time.

Keyword ：

stability electromagnetic transients (EMT) power electronics Thevenin equivalent modular multilevel converter (MMC)

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 GB/T 7714 Zhang, Feng , Yang, Xu , Huang, Lang et al. A fixed topology Thevenin equivalent integral model for modular multilevel converters [J]. | INTERNATIONAL TRANSACTIONS ON ELECTRICAL ENERGY SYSTEMS , 2018 , 28 (3) . MLA Zhang, Feng et al. "A fixed topology Thevenin equivalent integral model for modular multilevel converters" . | INTERNATIONAL TRANSACTIONS ON ELECTRICAL ENERGY SYSTEMS 28 . 3 (2018) . APA Zhang, Feng , Yang, Xu , Huang, Lang , Wang, Kangping , Xu, Guangzhao , Li, Yang et al. A fixed topology Thevenin equivalent integral model for modular multilevel converters . | INTERNATIONAL TRANSACTIONS ON ELECTRICAL ENERGY SYSTEMS , 2018 , 28 (3) . Export to NoteExpress RIS BibTex
Delay and Decoupling Analysis of a Digital Active EMI Filter Used in Arc Welding Inverter EI SCIE Scopus

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Abstract ：

Arc welding inverter supply with switch and digital control is widely used, due to the advantages of high controllability, small size, and high efficiency. With the constant increasing of switching frequency and decreasing of arc welding machine size, the conducted electromagnetic interference (EMI) becomes serious, especially for commonmode (CM)-conducted EMI. Mean-while, as the development of digital processing technique, digital active EMI filter (DAEF) technology, which uses digital control and embedded mode, has become a hot research topic. However, the conventional DAEF fails to consider time delay effect. Its model cannot accurately describe DAEF filtering behavior. Moreover, decoupling circuit lacks scientific design method. To cope with these, this paper proposes a precise DAEF model which considers both the time delay of digital processing portion and the parasitic parameters of passive components. Moreover, based on impedance matching principle, a detailed and scientific design method of decoupling circuit is put forward. Meanwhile, the arc welding inverter system with embedded DAEF is designed, modeled, and compensated. Finally, experiment results show that the proposed precise model can predict the system filtering performance accurately. And the proposed design method of decoupling circuit is very effective to suppress the CM-conducted EMI. The embedded DAEF can improve system stability and dynamic performance.

Keyword ：

decoupling EMI Common mode (CM) conducted electromagnetic interference (EMI) delay model EMI filter digital active embedded

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 GB/T 7714 Ji, Junpeng , Chen, Wenjie , Yang, Xu et al. Delay and Decoupling Analysis of a Digital Active EMI Filter Used in Arc Welding Inverter [J]. | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2018 , 33 (8) : 6710-6722 . MLA Ji, Junpeng et al. "Delay and Decoupling Analysis of a Digital Active EMI Filter Used in Arc Welding Inverter" . | IEEE TRANSACTIONS ON POWER ELECTRONICS 33 . 8 (2018) : 6710-6722 . APA Ji, Junpeng , Chen, Wenjie , Yang, Xu , Lu, Jingjie . Delay and Decoupling Analysis of a Digital Active EMI Filter Used in Arc Welding Inverter . | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2018 , 33 (8) , 6710-6722 . Export to NoteExpress RIS BibTex
Switching Transient Analysis for Normally-Off GaN Transistors with p-GaN Gate in a Phase-Leg Circuit EI Scopus

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Abstract ：

Commercially available normally-off GaN power HEMT devices have typically adopted a p-GaN gate structure. In the gate region, there exist a Schottky junction and a p-GaN/AlGaN/GaN heterojunction. With drain voltage changing during a switching process, the variation of net charge in the floating p-GaN layer would cause instability in threshold voltage. Besides, the gate-related junction capacitances would exhibit behavior different from those of a Si MOSFET. Consequently, the switching transient performance of a GaN transistor with a p-GaN gate could be significantly influenced by the aforementioned factors. In this work, the threshold voltage instability associated with the drain-to-gate voltage stress is firstly analyzed. Despite the difficulties in directly performing capacitance measurements inside the device structure, a hybrid physical-behavior modeling method is proposed. The model is capable of extracting the capacitance-bias relationships with regard to the gate region from static terminal measurements. In previous works, the advanced analytical model would make modest change on Si MOSFET's model. As a result, the simulated waveforms would exhibit 20 <formula><tex>$\times$</tex></formula> 50% discrepancy from experiment. In contrast, the proposed switching transient analytical approach would exhibit improved accuracy. Consequently, the switching transient performance of GaN transistor with p-GaN gate could be more accurately evaluated. IEEE

Keyword ：

Analytical approach GaN HEMTs Junction capacitances Physical behaviors Schottky junctions Switching transient Terminal measurements Threshold-voltage instabilities

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 GB/T 7714 Xie, Ruiliang , Yang, Xu , Xu, Guangzhao et al. Switching Transient Analysis for Normally-Off GaN Transistors with p-GaN Gate in a Phase-Leg Circuit [J]. | IEEE Transactions on Power Electronics , 2018 . MLA Xie, Ruiliang et al. "Switching Transient Analysis for Normally-Off GaN Transistors with p-GaN Gate in a Phase-Leg Circuit" . | IEEE Transactions on Power Electronics (2018) . APA Xie, Ruiliang , Yang, Xu , Xu, Guangzhao , Wei, Jin , Wang, Yuru , Wang, Hanxing et al. Switching Transient Analysis for Normally-Off GaN Transistors with p-GaN Gate in a Phase-Leg Circuit . | IEEE Transactions on Power Electronics , 2018 . Export to NoteExpress RIS BibTex
Energy Management of Microgrid in Smart Building Considering Air Temperature Impact EI CPCI-S Scopus

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Abstract ：

The economic dispatch is based on finding the optimal combination of all the energy resources of the microgrid. In this paper, a smart building microgrid model is supplied by diesel generators, PV, energy storage system (ESS), and main grid. The objective of this paper is to manage the generation resources which operate over a time horizon while satisfying many key constraints in low cost. In order to achieve better energy efficiency in the building, this paper proposed an improved energy management operation. In the proposed operation, the economic dispatch operation ED is presented according to such aspects as air temperature impact, the resistance of building shell, time horizon and so on. The accuracy and feasibility of the proposed energy management operation has been validated by GAMS simulation results.

Keyword ：

economic dispatch Smart building microgrid Air temperature impact

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 GB/T 7714 Abou Houran, Mohamad , Yang, Xu , Chen, Wenjie . Energy Management of Microgrid in Smart Building Considering Air Temperature Impact [C] . 2018 : 2398-2404 . MLA Abou Houran, Mohamad et al. "Energy Management of Microgrid in Smart Building Considering Air Temperature Impact" . (2018) : 2398-2404 . APA Abou Houran, Mohamad , Yang, Xu , Chen, Wenjie . Energy Management of Microgrid in Smart Building Considering Air Temperature Impact . (2018) : 2398-2404 . Export to NoteExpress RIS BibTex
Wireless Power Transfer: Critical Review of Related Standards CPCI-S

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Abstract ：

Wireless power transfer system (WPT) turned to be a reliable and an appropriate strategy, which found many applications. However, there is a growing concern about two safety issues. The first one is linked to the human exposure to electromagnetic fields (EMFs) that may cause potential health hazards. The second issue is the electromagnetic compatibility (EMC), where WPT systems may cause disturbance to electrical circuits. With the rapid development of WPT systems including the wide range of frequency and power, many leading countries in WPT industry have set many standards and regulations for safety usage of WPT. However, due to the complexity and variety of these standards, it is usually difficult to follow for both researchers and electrical engineers. This paper aims to provide a review for the recent standards and regulations concerning WPT industry and its applications. Therefore, a simple classification with a comprehensive comparison is presented.

Keyword ：

EMI standards electromagnetic fields wireless power transfer Electromagnetic compatibility

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 GB/T 7714 Abou Houran, Mohamad , Yang, Xu , Chen, Wenjie et al. Wireless Power Transfer: Critical Review of Related Standards [C] . 2018 : 1062-1066 . MLA Abou Houran, Mohamad et al. "Wireless Power Transfer: Critical Review of Related Standards" . (2018) : 1062-1066 . APA Abou Houran, Mohamad , Yang, Xu , Chen, Wenjie , Samizadeh, Mehdi . Wireless Power Transfer: Critical Review of Related Standards . (2018) : 1062-1066 . Export to NoteExpress RIS BibTex
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