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< Page ,Total 29 >
A liquid MEMS inclinometer sensor with improved sensitivity EI
期刊论文 | 2019 , 285 , 369-377 | Sensors and Actuators, A: Physical
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Abstract :

This paper proposes a liquid microelectromechanical system (MEMS) inclinometer sensor and reports its design, fabrication, and characterization. In the sensor, a liquid metal droplet moves inside an annular-shaped channel, driven by gravity. The position of the liquid metal is reflected by electrodes and the new tilting angle is obtained. A MEMS fabrication process has been developed, and characterisation of the sensor has been carried out. Experiments show that the sensor has a resolution of 3.625° and a wide measuring range of ±45°. In comparison with solid MEMS gyroscopes, the proposed liquid sensor has advantages of fewer manufacturing steps and low costs. Beside, its resilience against impact is outstanding. Its sensitivity and accuracy are more than sufficient for hand held electronics, which are the main targeted applications of the proposed liquid sensor. © 2018 Elsevier B.V.

Keyword :

Liquid metal droplets Liquid sensors Measuring ranges MEMS fabrication MEMS gyroscope Micro electromechanical system (MEMS) Sliding angle Superhydrophobic

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GB/T 7714 Xu, Han-yang , Zhao, Yu-long , Zhang, Kai et al. A liquid MEMS inclinometer sensor with improved sensitivity [J]. | Sensors and Actuators, A: Physical , 2019 , 285 : 369-377 .
MLA Xu, Han-yang et al. "A liquid MEMS inclinometer sensor with improved sensitivity" . | Sensors and Actuators, A: Physical 285 (2019) : 369-377 .
APA Xu, Han-yang , Zhao, Yu-long , Zhang, Kai , Wang, Zi-xi , Jiang, Kyle . A liquid MEMS inclinometer sensor with improved sensitivity . | Sensors and Actuators, A: Physical , 2019 , 285 , 369-377 .
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Research on ion implantation in MEMS device fabrication by theory, simulation and experiments SCIE Scopus
期刊论文 | 2018 , 32 (14) | INTERNATIONAL JOURNAL OF MODERN PHYSICS B
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Abstract :

Ion implantation is widely utilized in microelectromechanical systems (MEMS), applied for embedded lead, resistors, conductivity modifications and so forth. In order to achieve an expected device, the principle of ion implantation must be carefully examined. The elementary theory of ion implantation including implantation mechanism, projectile range and implantation-caused damage in the target were studied, which can be regarded as the guidance of ion implantation in MEMS device design and fabrication. Critical factors including implantations dose, energy and annealing conditions are examined by simulations and experiments. The implantation dose mainly determines the dopant concentration in the target substrate. The implantation energy is the key factor of the depth of the dopant elements. The annealing time mainly affects the repair degree of lattice damage and thus the activated elements' ratio. These factors all together contribute to ions' behavior in the substrates and characters of the devices. The results can be referred to in the MEMS design, especially piezoresistive devices.

Keyword :

microelectromechanical systems (MEMS) fabrication Ion implantation

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GB/T 7714 Bai, Minyu , Zhao, Yulong , Jiao, Binbin et al. Research on ion implantation in MEMS device fabrication by theory, simulation and experiments [J]. | INTERNATIONAL JOURNAL OF MODERN PHYSICS B , 2018 , 32 (14) .
MLA Bai, Minyu et al. "Research on ion implantation in MEMS device fabrication by theory, simulation and experiments" . | INTERNATIONAL JOURNAL OF MODERN PHYSICS B 32 . 14 (2018) .
APA Bai, Minyu , Zhao, Yulong , Jiao, Binbin , Zhu, Lingjian , Zhang, Guodong , Wang, Lei . Research on ion implantation in MEMS device fabrication by theory, simulation and experiments . | INTERNATIONAL JOURNAL OF MODERN PHYSICS B , 2018 , 32 (14) .
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Design and Performance Test of an Ocean Turbulent Kinetic Energy Dissipation Rate Measurement Probe EI SCIE Scopus
期刊论文 | 2018 , 9 (6) | MICROMACHINES
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Abstract :

Ocean turbulent kinetic energy dissipation rate is an essential parameter in marine environmental monitoring. Numerous probes have been designed to measure the turbulent kinetic energy dissipation rate in the past, and most of them utilize piezoelectric ceramics as the sensing element. In this paper, an ocean turbulent kinetic energy dissipation rate measurement probe utilizing a microelectromechanical systems (MEMS) piezoresistor as the sensing element has been designed and tested. The triangle cantilever beam and piezoresistive sensor chip are the core components of the designed probe. The triangle cantilever beam acts as a velocity-force signal transfer element, the piezoresistive sensor chip acts as a force-electrical signal transfer element, and the piezoresistive sensor chip is bonded on the triangle cantilever beam. One end of the triangle cantilever beam is a nylon sensing head which contacts with fluid directly, and the other end of it is a printed circuit board which processes the electrical signal. A finite element method has been used to study the effect of the cantilever beam on probe performance. The Taguchi optimization methodology is applied to optimize the structure parameters of the cantilever beam. An orthogonal array, signal-to-noise ratio, and analysis of variance are studied to analyze the effect of these parameters. Through the use of the designed probe, we can acquire the fluid flow velocity, and to obtain the ocean turbulent dissipation rate, an attached signal processing system has been designed. To verify the performance of the designed probe, tests in the laboratory and in the Bohai Sea are designed and implemented. The test results show that the designed probe has a measurement range of 10(-8)-10(-4) W/kg and a sensitivity of 3.91 x 10(-4) (Vms(2))/kg. The power spectrum calculated from the measured velocities shows good agreement with the Nasmyth spectrum. The comparative analysis between the designed probe in this paper and the commonly used PNS probe has also been completed. The designed probe can be a strong candidate in marine environmental monitoring.

Keyword :

marine environmental monitoring turbulent kinetic energy dissipation rate probe Taguchi method microelectromechanical systems (MEMS) piezoresistive sensor chip

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GB/T 7714 Tian, Bian , Li, Huafeng , Yang, Hua et al. Design and Performance Test of an Ocean Turbulent Kinetic Energy Dissipation Rate Measurement Probe [J]. | MICROMACHINES , 2018 , 9 (6) .
MLA Tian, Bian et al. "Design and Performance Test of an Ocean Turbulent Kinetic Energy Dissipation Rate Measurement Probe" . | MICROMACHINES 9 . 6 (2018) .
APA Tian, Bian , Li, Huafeng , Yang, Hua , Zhao, Yulong , Chen, Pei , Song, Dalei . Design and Performance Test of an Ocean Turbulent Kinetic Energy Dissipation Rate Measurement Probe . | MICROMACHINES , 2018 , 9 (6) .
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A Novel Single-Axis MEMS Tilt Sensor with a High Sensitivity in the Measurement Range from 0 degrees to 360 degrees EI SCIE PubMed Scopus
期刊论文 | 2018 , 18 (2) | SENSORS
WoS CC Cited Count: 1 SCOPUS Cited Count: 1
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Abstract :

In this paper, a novel single-axis MEMS tilt sensor is presented. It contains a hexagonal proof mass, six micro-lever force amplifiers and three double-ended-tuning fork (DETF) resonant strain gauges. The proof mass is placed in the center with the micro-levers and the DETFs radially arrayed around. The variation of gravity acceleration applied on the proof mass will result in frequency shifts of the DETFs. Angular tilt can be got by analyzing the frequency outputs. The structural design of the tilt sensor is optimized by finite element simulation and the device is microfabricated using a silicon-on-insulator process, followed by open-loop and closed-loop characterizations. Results show that the scale factor of such sensor is at least 11.53 Hz/degree. Minimum Allan deviation of the DETF oscillator is 220 ppb (parts per billion) of the resonant frequency for an 5 s integration time. Resolution of the tilt sensor is 0.002 degrees in the whole measurement range from 0 degrees to 360 degrees.

Keyword :

double-ended tuning fork tilt sensor oscillator MEMS resonator

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GB/T 7714 Wang, Shudong , Wei, Xueyong , Weng, Yinsheng et al. A Novel Single-Axis MEMS Tilt Sensor with a High Sensitivity in the Measurement Range from 0 degrees to 360 degrees [J]. | SENSORS , 2018 , 18 (2) .
MLA Wang, Shudong et al. "A Novel Single-Axis MEMS Tilt Sensor with a High Sensitivity in the Measurement Range from 0 degrees to 360 degrees" . | SENSORS 18 . 2 (2018) .
APA Wang, Shudong , Wei, Xueyong , Weng, Yinsheng , Zhao, Yulong , Jiang, Zhuangde . A Novel Single-Axis MEMS Tilt Sensor with a High Sensitivity in the Measurement Range from 0 degrees to 360 degrees . | SENSORS , 2018 , 18 (2) .
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A Manganin Thin Film Ultra-High Pressure Sensor for Microscale Detonation Pressure Measurement EI SCIE PubMed Scopus
期刊论文 | 2018 , 18 (3) | SENSORS
SCOPUS Cited Count: 1
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Abstract :

With the development of energetic materials (EMs) and microelectromechanical systems (MEMS) initiating explosive devices, the measurement of detonation pressure generated by EMs in the microscale has become a pressing need. This paper develops a manganin thin film ultra-high pressure sensor based on MEMS technology for measuring the output pressure from micro-detonator. A reliable coefficient is proposed for designing the sensor's sensitive element better. The sensor employs sandwich structure: the substrate uses a 0.5 mm thick alumina ceramic, the manganin sensitive element with a size of 0.2 mm x 0.1 mm x 2 mu m and copper electrodes of 2 mu m thick are sputtered sequentially on the substrate, and a 25 mu m thick insulating layer of polyimide is wrapped on the sensitive element. The static test shows that the piezoresistive coefficient of manganin thin film is 0.0125 GPa(-1). The dynamic experiment indicates that the detonation pressure of micro-detonator is 12.66 GPa, and the response time of the sensor is 37 ns. In a word, the sensor developed in this study is suitable for measuring ultra-high pressure in microscale and has a shorter response time than that of foil-like manganin gauges. Simultaneously, this study could be beneficial to research on ultra-high-pressure sensors with smaller size.

Keyword :

manganin thin film microscale measurement detonation pressure ultra-high pressure sensor MEMS technology

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GB/T 7714 Zhang, Guodong , Zhao, Yulong , Zhao, Yun et al. A Manganin Thin Film Ultra-High Pressure Sensor for Microscale Detonation Pressure Measurement [J]. | SENSORS , 2018 , 18 (3) .
MLA Zhang, Guodong et al. "A Manganin Thin Film Ultra-High Pressure Sensor for Microscale Detonation Pressure Measurement" . | SENSORS 18 . 3 (2018) .
APA Zhang, Guodong , Zhao, Yulong , Zhao, Yun , Wang, Xinchen , Wei, Xueyong , Ren, Wei et al. A Manganin Thin Film Ultra-High Pressure Sensor for Microscale Detonation Pressure Measurement . | SENSORS , 2018 , 18 (3) .
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A piezoelectric cantilever with novel large mass for harvesting energy from low frequency vibrations EI Scopus SCIE
期刊论文 | 2018 , 8 (11) | AIP Advances
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Abstract :

© 2018 Author(s). The piezoelectric cantilever with a large proof mass is a classic vibration energy harvesting structure. In this study, in order to harvest much more energy from low frequency vibration in the finite volume, a novel L type mass block is proposed and compared with a traditional rectangular mass block for the piezoelectric cantilever. A theoretical modeling of lumped parameter system is carried out considering the effect of mass block length on mass, stiffness and damping. A series of PZT bimorph cantilevers with brass proof mass prototypes are fabricated for the experimental verification. Their eigenfrequency and maximum piezoelectric power output are analyzed by the experiment and simulation. The piezoelectric cantilever with L type mass block avoids the weakness of decreasing the effective length of piezoelectric cantilever, and has lower eigenfrequency and larger piezoelectric power output than that with rectangular mass block. Its piezoelectric power output of 192 mW/(g2) can be obtained at the low resonant frequency of 18.1 Hz and the optimal load impedance of 5kΩ, and the unit volume power density is as high as 24.6 mW/(cm3×g2).

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GB/T 7714 Wang, Lu , Lu, Dejiang , Jiang, Zhuangde et al. A piezoelectric cantilever with novel large mass for harvesting energy from low frequency vibrations [J]. | AIP Advances , 2018 , 8 (11) .
MLA Wang, Lu et al. "A piezoelectric cantilever with novel large mass for harvesting energy from low frequency vibrations" . | AIP Advances 8 . 11 (2018) .
APA Wang, Lu , Lu, Dejiang , Jiang, Zhuangde , Jia, Chen , Wu, Yumeng , Zhou, Xiangyang et al. A piezoelectric cantilever with novel large mass for harvesting energy from low frequency vibrations . | AIP Advances , 2018 , 8 (11) .
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Research of a Novel Ultra-High Pressure Sensor with High-Temperature Resistance EI SCIE Scopus
期刊论文 | 2018 , 9 (1) | MICROMACHINES
WoS CC Cited Count: 1 SCOPUS Cited Count: 1
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Abstract :

Ultra-high pressure measurement has significant applications in various fields such as high pressure synthesis of new materials and ultra-high pressure vessel monitoring. This paper proposes a novel ultra-high pressure sensor combining a truncated-cone structure and a silicon-on-insulator (SOI) piezoresistive element for measuring the pressure up to 1.6 GPa. The truncated-cone structure attenuates the measured pressure to a level that can be detected by the SOI piezoresistive element. Four piezoresistors of the SOI piezoresistive element are placed along specific crystal orientation and configured as a Wheatstone bridge to obtain voltage signals. The sensor has an advantage of high-temperature resistance, in that the structure of the piezoresistive element can avoid the leakage current at high temperature and the truncated-cone structure separates the piezoresistive element from the heat environment. Furthermore, the upper surface diameter of the truncated-cone structure is designed to be 2 mm for the application of small scale. The results of static calibration show that the sensor exhibits a good performance in hysteresis and repeatability. The temperature experiment indicates that the sensor can work steadily at high temperature. This study would provide a better insight to the research of ultra-high pressure sensors with larger range and smaller size.

Keyword :

microelectromechanical systems (MEMS) technology high-temperature resistance ultra-high pressure sensor silicon-on-insulator (SOI) piezoresistive element small size

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GB/T 7714 Zhang, Guo-Dong , Zhao, Yu-Long , Zhao, Yun et al. Research of a Novel Ultra-High Pressure Sensor with High-Temperature Resistance [J]. | MICROMACHINES , 2018 , 9 (1) .
MLA Zhang, Guo-Dong et al. "Research of a Novel Ultra-High Pressure Sensor with High-Temperature Resistance" . | MICROMACHINES 9 . 1 (2018) .
APA Zhang, Guo-Dong , Zhao, Yu-Long , Zhao, Yun , Wang, Xin-Chen , Wei, Xue-Yong . Research of a Novel Ultra-High Pressure Sensor with High-Temperature Resistance . | MICROMACHINES , 2018 , 9 (1) .
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A micro-machined differential resonance accelerometer based on silicon on quartz method EI SCIE Scopus
期刊论文 | 2017 , 253 , 1-9 | SENSORS AND ACTUATORS A-PHYSICAL | IF: 2.311
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Abstract :

This paper describes a micro resonance accelerometer working in air with differential configuration using silicon spring-mass and quartz double ended tuning fork (Q-DETF) resonator. When acceleration is applied in sensing direction, the inertial force of proof mass will apply axial force on Q-DETFs, which shifts the resonance frequency of Q-DETFs. Dual Q-DETFs, working in differential condition, are bonded in the same plane at the middle of proof mass thickness along the diagonal line of square proof mass. The configuration has the advantage that the inertial force of proof mass is mostly applied along the axis of Q-DETF tines when acceleration is applied in sensing direction, and the bending of DETF induced by acceleration in sensing direction is very small so that it can be neglected, which can improve sensor non linearity. The highly symmetrical configuration of the sensor can better eliminate most of common-mode disturbance, especially temperature and residual stress. Theoretical analysis on sensitivity is conducted and the result matches well with experimental data. The sensor is fabricated and characterized in air using rotary experiment in earth gravitational field. In the experimental range of +/- 1g, the tested sensitivity, nonlinearity and hysteresis are 6.317 Hz/g, 0.26% and 0.09%, respectively. The sensor stability in 12 h is also tested in air under the influence of temperature turbulence and residual stress and the drifting of sensor output is less than 0.5 Hz. (C) 2016 Elsevier B.V. All rights reserved.

Keyword :

Silicon on quartz (SOQ) Differential structure Resonance accelerometer Quartz DETF

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GB/T 7714 Li, Cun , Zhao, Yulong , Li, Bo et al. A micro-machined differential resonance accelerometer based on silicon on quartz method [J]. | SENSORS AND ACTUATORS A-PHYSICAL , 2017 , 253 : 1-9 .
MLA Li, Cun et al. "A micro-machined differential resonance accelerometer based on silicon on quartz method" . | SENSORS AND ACTUATORS A-PHYSICAL 253 (2017) : 1-9 .
APA Li, Cun , Zhao, Yulong , Li, Bo , Cheng, Rongjun , Sun, Dengqiang , Han, Chao et al. A micro-machined differential resonance accelerometer based on silicon on quartz method . | SENSORS AND ACTUATORS A-PHYSICAL , 2017 , 253 , 1-9 .
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Fabrication of capacitive micromachined ultrasonic transducers with low-temperature direct wafer-Bonding technology EI SCIE Scopus
期刊论文 | 2017 , 264 , 63-75 | SENSORS AND ACTUATORS A-PHYSICAL | IF: 2.311
WoS CC Cited Count: 3
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Abstract :

In this paper, the low temperature direct wafer-bonding technique under 350 C is used to fabricate the capacitive micromachined ultrasonic transducers (CMUTs) and the first illustration of CMUTs with a 15 x 15 array is obtained. In comparison with other wafer-bonding technology under high temperature beyond 400 degrees C, the thermal stress and thermal deformation of CMUTs produced in the wafer-bonding process can be decreased largely because of low bonding temperature. What's more, the low temperature direct wafer-bonding technique is beneficial to combine the CMUTs chip with integrated circuits (ICs) as well as reduce the parasitic capacitance. Based on the low temperature direct wafer-bonding process, a silicon-on-insulator (SOI) wafer with the silicon device layer used for transducer membrane and a low-resistivity silicon substrate with the structured SiO2 layer are bonded to fabricate the main structure of CMUTs. Therefore, the parasitic capacitance of CMUTs can be further reduced since there is no metal auxiliary layer existing during the bonding process. The structure morphology and electrical characterization of fabricated CMUTs are tested in this paper. Then, the impedance-frequency curve and the corresponding phase-frequency curve of the CMUTs are obtained perfectly, which demonstrate that the fabricated CMUTs based on the low-temperature direct wafer-bonding technique present the fine mechanical and electrical characteristics. (C) 2017 Elsevier B.V. All rights reserved.

Keyword :

Thermal deflection Parasitic capacitance Low temperature direct wafer-bonding CMUTs Thermal stress

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GB/T 7714 Zhao, Libo , Li, Jie , Li, Zhikang et al. Fabrication of capacitive micromachined ultrasonic transducers with low-temperature direct wafer-Bonding technology [J]. | SENSORS AND ACTUATORS A-PHYSICAL , 2017 , 264 : 63-75 .
MLA Zhao, Libo et al. "Fabrication of capacitive micromachined ultrasonic transducers with low-temperature direct wafer-Bonding technology" . | SENSORS AND ACTUATORS A-PHYSICAL 264 (2017) : 63-75 .
APA Zhao, Libo , Li, Jie , Li, Zhikang , Zhang, Jiawang , Zhao, Yihe , Wang, Jiuhong et al. Fabrication of capacitive micromachined ultrasonic transducers with low-temperature direct wafer-Bonding technology . | SENSORS AND ACTUATORS A-PHYSICAL , 2017 , 264 , 63-75 .
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A piezoresistive micro-accelerometer with high frequency response and low transverse effect EI SCIE Scopus
期刊论文 | 2017 , 28 (1) | MEASUREMENT SCIENCE AND TECHNOLOGY | IF: 1.685
WoS CC Cited Count: 2
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Abstract :

With the purpose of measuring vibration signals in high-speed machinery, this paper developed a piezoresistive micro-accelerometer with multi-beam structure by combining four tiny sensing beams with four suspension beams. The eight-beam (EB) structure was designed to improve the trade-off between the sensitivity and the natural frequency of piezoresistive accelerometer. Besides, the piezoresistor configuration in the sensing beams reduces the cross interference from the undesirable direction significantly. The natural frequency of the structure and the stress on the sensing beams are theoretically calculated, and then verified through finite element method (FEM). The proposed sensor is fabricated on the n-type single crystal silicon wafer and packaged for experiment. The results demonstrate that the developed device possesses a suitable characteristic in sensitivity, natural frequency and transverse effect, which allows its usage in the measuring high frequency vibration signals.

Keyword :

vibration micro-accelerometer transverse effect high natural frequency

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GB/T 7714 Wang, Peng , Zhao, Yulong , Tian, Bian et al. A piezoresistive micro-accelerometer with high frequency response and low transverse effect [J]. | MEASUREMENT SCIENCE AND TECHNOLOGY , 2017 , 28 (1) .
MLA Wang, Peng et al. "A piezoresistive micro-accelerometer with high frequency response and low transverse effect" . | MEASUREMENT SCIENCE AND TECHNOLOGY 28 . 1 (2017) .
APA Wang, Peng , Zhao, Yulong , Tian, Bian , Liu, Yan , Wang, Zixi , Li, Cun et al. A piezoresistive micro-accelerometer with high frequency response and low transverse effect . | MEASUREMENT SCIENCE AND TECHNOLOGY , 2017 , 28 (1) .
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